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FF200R33KF2CNOSA1

Infineon Technologies
RoHS
/
Package Module
Category Transistors - IGBTs - Modules / Transistors - IGBTs - Modules
Description IGBT Modules 3300V 200A DUAL
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Inventory: 6725
Minimum: 1
Total Price: USD $3444.33
Unit Price: USD $3444.326192
≥1 USD $3444.326192
≥200 USD $1332.908596
≥500 USD $1286.065637
≥1000 USD $1262.920523

Technical Details

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 8
JESD-30 Code R-XUFM-X8
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 2.2kW
Case Connection ISOLATED
Power - Max 2200W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 3.3kV
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 330A
Turn On Time 480 ns
Vce(on) (Max) @ Vge, Ic 4.25V @ 15V, 200A
Turn Off Time-Nom (toff) 1900 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 25nF @ 25V
VCEsat-Max 4.25 V

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

NVMFS4C01NWFT3G
ON Semiconductor

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