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MRF8S21120HSR3
NXP USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage NI-780S
Category Transistors - FETs, MOSFETs - RF / Transistors - FETs, MOSFETs - RF
Description
RF MOSFET Transistors HV8 2.1GHZ 120W NI780HS
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Inventory: 5242
Minimum: 1
Total Price: USD $89.74
Unit Price: USD $89.7351
≥1 USD $89.7351
≥200 USD $86.84045
≥500 USD $83.9458
≥1000 USD $75.26185
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Package / Case NI-780S
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.17GHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF8S21120
JESD-30 Code R-CDFP-F2
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 850mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 17.6dB
DS Breakdown Voltage-Min 65V
Power - Output 28W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
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