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MPSH81
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - RF / Transistors - Bipolar (BJT) - RF
Description
Bulk Through Hole PNP Single RF Transistor 60 @ 5mA 10V 50mA 350mW 600MHz
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Inventory: 1481
Minimum: 1
Total Price: USD $0.33
Unit Price: USD $0.333376
≥1 USD $0.333376
≥10 USD $0.314507
≥100 USD $0.296701
≥500 USD $0.279907
≥1000 USD $0.264067
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 195mg
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -20V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Current Rating -50mA
Frequency 600MHz
Base Part Number MPSH81
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Collector Emitter Breakdown Voltage 20V
Transition Frequency 600MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 60
Continuous Collector Current 50mA
Collector-Base Capacitance-Max 0.85pF
Alternative Model
No data
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