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MPS3563G
ON SemiconductorRoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - RF / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 12V 1.5GHZ TO92
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Inventory: 8125
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.065697
≥1 USD $0.065697
≥10 USD $0.061983
≥100 USD $0.058473
≥500 USD $0.055165
≥1000 USD $0.05204
Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation 350W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 850mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 1.5 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 14dB @ 200MHz
Transition Frequency 1500MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 2V
hFE Min 20
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.7pF
Noise Figure (dB Typ @ f) 6.5dB @ 60MHz
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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