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IXGH42N30C3
IXYSRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 300V 223W TO247
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Inventory: 8164
Minimum: 1
Total Price: USD $15.77
Unit Price: USD $15.77285
≥1 USD $15.77285
≥10 USD $12.94185
≥100 USD $12.5381
≥500 USD $12.1334
≥1000 USD $11.7287
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Supply Chain
Factory Lead Time 30 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 223W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 223W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 42A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1.54V
Turn On Time 43 ns
Test Condition 200V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 42A
Turn Off Time-Nom (toff) 229 ns
IGBT Type PT
Gate Charge 76nC
Current - Collector Pulsed (Icm) 250A
Td (on/off) @ 25°C 21ns/113ns
Switching Energy 120μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 120ns
Dimensions
Height 21.46mm
Length 16.26mm
Width 5.3mm
Compliance
RoHS Status ROHS3 Compliant
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