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IXXH100N60B3
IXYSRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT Transistors XPT IGBT B3-Class 600V/210Amp
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Inventory: 9663
Minimum: 1
Total Price: USD $0.88
Unit Price: USD $0.88373
≥1 USD $0.88373
≥10 USD $0.83371
≥100 USD $0.78652
≥500 USD $0.742
≥1000 USD $0.7
≥3000 USD $0.66038
Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 830W
Terminal Position SINGLE
Base Part Number IXX*N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 830W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 220A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 92 ns
Test Condition 360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 70A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
Gate Charge 143nC
Current - Collector Pulsed (Icm) 480A
Td (on/off) @ 25°C 30ns/120ns
Switching Energy 1.9mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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