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IXGH48N60B3D1

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-247
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Inventory: 7368
Minimum: 1
Total Price: USD $7.23
Unit Price: USD $7.23399
≥1 USD $7.23399
≥10 USD $6.82452
≥100 USD $6.43823
≥500 USD $6.0738
≥1000 USD $5.73
≥3000 USD $5.40566

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 280A
Reverse Recovery Time 100ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 44 ns
Test Condition 480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 32A
Turn Off Time-Nom (toff) 347 ns
IGBT Type PT
Gate Charge 115nC
Td (on/off) @ 25°C 22ns/130ns
Switching Energy 840μJ (on), 660μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 200 ns

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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