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IKD06N60R
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 12A 100W TO252-3
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Inventory: 4032
Minimum: 1
Total Price: USD $3.77
Unit Price: USD $3.77435
≥1 USD $3.77435
≥200 USD $3.097
≥500 USD $3.0001
≥1000 USD $2.9032
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Packaging Cut Tape (CT)
Published 2006
Series TrenchStop?
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD06N60
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 68ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 12A
Power Dissipation-Max (Abs) 100W
Turn On Time 22 ns
Test Condition 400V, 6A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A
Turn Off Time-Nom (toff) 335 ns
IGBT Type Trench
Gate Charge 48nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 12ns/127ns
Switching Energy 330μJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
Compliance
RoHS Status RoHS Compliant
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