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FGB20N60SFD
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT Transistors 600V 20A Field Stop
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Inventory: 8537
Minimum: 1
Total Price: USD $2.49
Unit Price: USD $2.489
≥1 USD $2.489
≥10 USD $2.0425
≥30 USD $1.97885
≥100 USD $1.91425
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 208W
Terminal Form GULL WING
Base Part Number FGB20N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Case Connection COLLECTOR
Input Type Standard
Power - Max 208W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 34 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.8V
Max Breakdown Voltage 600V
Turn On Time 28 ns
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Turn Off Time-Nom (toff) 123 ns
IGBT Type Field Stop
Gate Charge 65nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 13ns/90ns
Switching Energy 370μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 48 ns
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
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