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STGW30NC60WD
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
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Inventory: 6
Minimum: 1
Total Price: USD $2.42
Unit Price: USD $2.4168
≥1 USD $2.4168
≥10 USD $1.98265
≥30 USD $1.9209
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 60A
Base Part Number STGW30
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 29.5 ns
Transistor Application POWER CONTROL
Rise Time 12 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 118 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 42.5 ns
Test Condition 390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 189 ns
Gate Charge 102nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 29.5ns/118ns
Switching Energy 305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Dimensions
Height 20.15mm
Length 15.75mm
Width 5.15mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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