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FGH60N60SMD
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 120A 600W TO247
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Inventory: 6594
Minimum: 1
Total Price: USD $3.55
Unit Price: USD $3.54756
≥1 USD $3.54756
≥10 USD $3.34675
≥100 USD $3.15732
≥500 USD $2.9786
≥1000 USD $2.81
≥3000 USD $2.65094
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Base Part Number FGH60N60
Number of Elements 1
Rise Time-Max 70 ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 27 ns
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 146 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 39 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 59 ns
Test Condition 400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
Turn Off Time-Nom (toff) 163 ns
IGBT Type Field Stop
Gate Charge 189nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 18ns/104ns
Switching Energy 1.26mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 68 ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 20.6mm
Length 15.6mm
Width 4.7mm
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