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Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 55A 200W TO247AC
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Inventory: 4129
Minimum: 1
Total Price: USD $123.91
Unit Price: USD $123.91325
≥1 USD $123.91325
≥10 USD $119.78265
≥100 USD $107.3918
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 55A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application POWER CONTROL
Rise Time 25 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 140 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 55A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Input Capacitance 4nF
Turn On Time 71 ns
Test Condition 480V, 27A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 27A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 55A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 46ns/140ns
Switching Energy 990μJ (on), 590μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Dimensions
Height 24.99mm
Length 15.87mm
Width 5.3086mm
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