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FGA50N100BNTD2
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 1000V 50A 156W TO3P
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Inventory: 8761
Minimum: 1
Total Price: USD $3.53
Unit Price: USD $3.52545
≥1 USD $3.52545
≥200 USD $2.89275
≥450 USD $2.8025
≥900 USD $2.71225
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 156W
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 156W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 50A
Reverse Recovery Time 75 ns
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Saturation Voltage 1.5V
Turn On Time 102 ns
Test Condition 600V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 308 ns
IGBT Type NPT and Trench
Gate Charge 257nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 34ns/243ns
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 100 ns
Dimensions
Height 20.1mm
Length 15.8mm
Width 5mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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