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Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 70A 200W TO247AC
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Inventory: 400
Minimum: 1
Total Price: USD $11.01
Unit Price: USD $11.01128
≥1 USD $11.01128
≥10 USD $10.388
≥100 USD $9.8
≥500 USD $9.24528
≥1000 USD $8.72197
≥3000 USD $8.22827
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 70A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 31 ns
Rise Time 25 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 70A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 52 ns
Test Condition 480V, 39A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Turn Off Time-Nom (toff) 620 ns
Gate Charge 190nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 31ns/240ns
Switching Energy 370μJ (on), 2.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 190 ns
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