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FGH60N60SMD-F085
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 120A 600W TO247
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Inventory: 1
Minimum: 1
Total Price: USD $8.52
Unit Price: USD $8.519408
≥1 USD $8.519408
≥10 USD $7.528169
≥30 USD $6.922922
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Rise Time-Max 60ns
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 42ns
JEDEC-95 Code TO-247AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 120A
Power Dissipation-Max (Abs) 600W
Turn On Time 66 ns
Test Condition 400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
Turn Off Time-Nom (toff) 139 ns
IGBT Type Field Stop
Gate Charge 280nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 22ns/116ns
Switching Energy 1.59mJ (on), 390μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 20ns
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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