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FGH30T65UPDT-F155
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 650V 60A 250W TO247-3
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Inventory: 4552
Minimum: 1
Total Price: USD $3.02
Unit Price: USD $3.015731
≥1 USD $3.015731
≥200 USD $1.167168
≥450 USD $1.126468
≥900 USD $1.106775
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 60A
Reverse Recovery Time 43 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 52 ns
Test Condition 400V, 30A, 8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Turn Off Time-Nom (toff) 170 ns
IGBT Type Trench Field Stop
Gate Charge 155nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 22ns/139ns
Switching Energy 760μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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