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FGH40N60SFTU
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
FAIRCHILD SEMICONDUCTOR FGH40N60SFTU IGBT Single Transistor, General Purpose, 80 A, 2.3 V, 290 W, 600 V, TO-247AB, 3 Pins
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Inventory: 6846
Minimum: 1
Total Price: USD $2.65
Unit Price: USD $2.6543
≥1 USD $2.6543
≥10 USD $2.1774
≥30 USD $2.10995
≥100 USD $2.04155
≥450 USD $1.97315
≥900 USD $1.76985
Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Base Part Number FGH40N60
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 290W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Max Breakdown Voltage 1.2kV
Turn On Time 67 ns
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A
Turn Off Time-Nom (toff) 150 ns
IGBT Type Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 25ns/115ns
Switching Energy 1.13mJ (on), 310μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 54 ns
Dimensions
Height 20.6mm
Length 15.6mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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