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STGWT40H65DFB
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 650V 80A 283W TO3P-3L
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Inventory: 8243
Minimum: 1
Total Price: USD $6.91
Unit Price: USD $6.91315
≥1 USD $6.91315
≥10 USD $5.67245
≥30 USD $5.4948
≥100 USD $5.31715
Technical Details
Supply Chain
Factory Lead Time 32 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.756003g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 283W
Base Part Number STGWT40
Element Configuration Single
Input Type Standard
Power - Max 283W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/142ns
Switching Energy 498μJ (on), 363μJ (off)
Gate-Emitter Voltage-Max 20V
Dimensions
Height 20.1mm
Length 15.8mm
Width 5mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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