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IXGH36N60B3C1
IXYSRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IXYS SEMICONDUCTOR IXGH36N60B3C1 IGBT Single Transistor, 75 A, 1.8 V, 250 W, 600 V, TO-247, 3
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Inventory: 8262
Minimum: 1
Total Price: USD $50.68
Unit Price: USD $50.68155
≥1 USD $50.68155
≥10 USD $41.5853
≥100 USD $40.2857
≥500 USD $38.9861
≥1000 USD $37.6865
Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Base Part Number IXG*36N60
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.5V
Turn On Time 47 ns
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
Gate Charge 80nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 20ns/125ns
Switching Energy 390μJ (on), 800μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 160ns
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