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FGH40N60SMD
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 80A 349W TO-247-3
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Inventory: 1018
Minimum: 1
Total Price: USD $5
Unit Price: USD $4.997
≥1 USD $4.997
≥10 USD $4.1002
≥30 USD $3.97195
≥90 USD $3.8437
≥450 USD $3.71545
≥900 USD $3.33165
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Dimensions
Height 20.6mm
Length 15.6mm
Width 4.7mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 349W
Base Part Number FGH40N60
Number of Elements 1
Rise Time-Max 28 ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 349W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 36 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 37 ns
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 132 ns
IGBT Type Field Stop
Gate Charge 119nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 12ns/92ns
Switching Energy 870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 17 ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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