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FGY75N60SMD
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3 Variant
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
FAIRCHILD SEMICONDUCTOR FGY75N60SMDIGBT Single Transistor, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 Pins
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Inventory: 9342
Minimum: 1
Total Price: USD $23.63
Unit Price: USD $23.6265
≥1 USD $23.6265
≥10 USD $19.3857
≥100 USD $18.78055
≥500 USD $18.17445
≥1000 USD $17.56835
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 hours ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Weight 7.629g
Transistor Element Material SILICON
Dimensions
Height 20.32mm
Length 15.87mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 750W
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 750W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Reverse Recovery Time 55 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 76 ns
Test Condition 400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 75A
Turn Off Time-Nom (toff) 161 ns
IGBT Type Field Stop
Gate Charge 248nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 24ns/136ns
Switching Energy 2.3mJ (on), 770μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 29 ns
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