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IRG4PH50UPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description IGBT 1200V 45A 200W TO247AC
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Inventory: 8959
Minimum: 1
Total Price: USD $75.17
Unit Price: USD $75.17445
≥1 USD $75.17445
≥10 USD $61.6816
≥100 USD $59.75405
≥500 USD $57.8265
≥1000 USD $55.89895

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 200W
Current Rating 45A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 35 ns
Transistor Application POWER CONTROL
Rise Time 15 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 200 ns
Collector Emitter Voltage (VCEO) 3.7V
Max Collector Current 45A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.7V
Turn On Time 49 ns
Test Condition 960V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 24A
Turn Off Time-Nom (toff) 600 ns
Gate Charge 160nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 35ns/200ns
Switching Energy 530μJ (on), 1.41mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 500 ns

Dimensions

Height 20.3mm
Length 15.875mm
Width 5.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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