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IRG4BC10SD

Infineon Technologies
RoHS
/
Package TO-220-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description IGBT 600V 14A 38W TO220AB
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Inventory: 6925
Minimum: 1
Total Price: USD $7.92
Unit Price: USD $7.92205
≥1 USD $7.92205
≥10 USD $6.50085
≥100 USD $6.29755
≥500 USD $6.09425
≥1000 USD $5.89095

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 38W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 28ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 14A
Turn On Time 106 ns
Test Condition 480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 76ns/815ns
Switching Energy 310μJ (on), 3.28mJ (off)

Compliance

RoHS Status Non-RoHS Compliant

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