Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IRG4BC10UDPBF
Infineon TechnologiesRoHS
/
Package TO-220-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 8.5A 38W TO220AB
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 4435
Minimum: 1
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 38W
Current Rating 8.5A
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Rise Time 16 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 87 ns
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 8.5A
Reverse Recovery Time 28 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Turn On Time 56 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 5A
Turn Off Time-Nom (toff) 345 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 40ns/87ns
Switching Energy 140μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 210 ns
Dimensions
Height 15.24mm
Length 10.5156mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
Recommended For You