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IRG4BC10KDPBF
Infineon TechnologiesRoHS
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Package TO-220-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 9A 38W TO220AB
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Inventory: 1000
Minimum: 1
Total Price: USD $0.94
Unit Price: USD $0.9405
≥1 USD $0.9405
≥10 USD $0.7714
≥100 USD $0.74765
≥500 USD $0.72295
≥1000 USD $0.6992
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 8.77mm
Length 10.5156mm
Width 4.69mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 38W
Current Rating 9A
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application MOTOR CONTROL
Rise Time 32 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 2.62V
Max Collector Current 9A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.39V
Turn On Time 78 ns
Test Condition 480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Turn Off Time-Nom (toff) 410 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 49ns/97ns
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 210 ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
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