Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 75A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 48 ns
Test Condition 480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 32A
Turn Off Time-Nom (toff) 347 ns
IGBT Type PT
Gate Charge 115nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 22ns/130ns
Switching Energy 450μJ (on), 660μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 200 ns