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PMBFJ177,215
NXP USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - JFETs / Transistors - JFETs
Description
PMBFJ174 Series 30 V 20 mA P-Ch silicon Field-effect Transistor - SOT-23-3
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Inventory: 9244
Minimum: 1
Total Price: USD $2.68
Unit Price: USD $2.6847
≥1 USD $2.6847
≥10 USD $2.20305
≥100 USD $2.13465
≥500 USD $2.0653
≥1000 USD $1.9969
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Subcategory FET General Purpose Small Signal
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ177
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 300mW
FET Type P-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V VGS
Drain-source On Resistance-Max 300Ohm
DS Breakdown Voltage-Min 30V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 300Ohm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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