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IRFZ48VSPBF
INFINEON TECHNOLOGIES AGRoHS 
RoHS compliant
RoHS compliantPackage /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL SINGLE WITH BUILT-IN DIODE AVALANCHE RATED HIGH RELIABILITY ULTRA LOW RESISTANCE EAR99 Mosfet Transistor 72A 150W 60V 0.012Ohm
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Inventory: 7388
Minimum: 1
Total Price: USD $4.61
Unit Price: USD $4.60845
≥1 USD $4.60845
≥200 USD $3.781
≥500 USD $3.6632
≥1000 USD $3.54445
Technical Details
Supply Chain
Factory Lead Time [object Object]
Physical
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
Technical
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 72A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 290A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 166 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 150W
Compliance
RoHS Status RoHS Compliant
Alternative Model
No data
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