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BSC072N03LD G
Infineon Technologies AGRoHS
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Package /
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
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Inventory: 9608
Minimum: 1
Total Price: USD $2.15
Unit Price: USD $2.14795
≥1 USD $2.14795
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979
Technical Details
Physical
Surface Mount YES
Number of Terminals 6
Transistor Element Material SILICON
Technical
JESD-609 Code e3
Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.0094Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 57W
Compliance
RoHS Status RoHS Compliant
Alternative Model
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