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IPD70N03S4L-04
Infineon Technologies AGRoHS
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Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 70A TO252-3
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Pricing & Ordering
Inventory: 1499
Minimum: 1
Total Price: USD $1.6
Unit Price: USD $1.6036
≥1 USD $1.6036
≥10 USD $1.3167
≥100 USD $1.2749
≥500 USD $1.23405
≥1000 USD $1.1932
Technical Details
Physical
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
Technical
Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.0043Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 57 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 68W
Compliance
RoHS Status RoHS Compliant
Alternative Model
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