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BSB013NE2LXI
Infineon Technologies AGRoHS
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Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 5297
Minimum: 1
Total Price: USD $1.26
Unit Price: USD $1.261748
≥1 USD $1.261748
≥10 USD $1.190326
≥100 USD $1.122954
≥500 USD $1.059388
≥1000 USD $0.999422
Technical Details
Physical
Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Technical
JESD-609 Code e4
Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-MBCC-N3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 163A
Drain-source On Resistance-Max 0.0018Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 130 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 57W
Alternative Model
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