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71V416S10BE
Integrated Device Technology (IDT)RoHS
/
Package TFBGA
Category Memory / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 200mA
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Inventory: 9574
Minimum: 1
Total Price: USD $8.39
Unit Price: USD $8.390146
≥1 USD $8.390146
≥10 USD $7.915234
≥100 USD $7.467203
≥500 USD $7.044535
≥1000 USD $6.645784
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Package / Case TFBGA
Number of Pins 48
Technical
Published 2013
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 4
Number of Terminations 48
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.75mm
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 48
Operating Supply Voltage 3.3V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Memory Size 512kB
Number of Ports 1
Nominal Supply Current 200mA
Memory Type RAM, SDR, SRAM - Asynchronous
Access Time 10 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 4 Mb
Standby Current-Max 0.02A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 16b
Standby Voltage-Min 3V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
Dimensions
Length 9mm
Width 9mm
Thickness 1.2mm
Alternative Model
No data
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