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IPB030N08N3 G
Infineon Technologies AGRoHS
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Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 2080
Minimum: 1
Total Price: USD $3.61
Unit Price: USD $3.610411
≥1 USD $3.610411
≥10 USD $3.406056
≥100 USD $3.213253
≥500 USD $3.031369
≥1000 USD $2.859786
Technical Details
Physical
Surface Mount YES
Number of Terminals 6
Transistor Element Material SILICON
Technical
JESD-609 Code e3
Pbfree Code icon-pbfree no
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 7
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 160A
Drain-source On Resistance-Max 0.003Ohm
Pulsed Drain Current-Max (IDM) 640A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 510 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Compliance
RoHS Status RoHS Compliant
Alternative Model
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