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71V256SA15YG8
Integrated Device Technology (IDT)RoHS
/
Package /
Category Memory / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 256kb 85mA
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Inventory: 7945
Minimum: 1
Total Price: USD $1.15
Unit Price: USD $1.152726
≥1 USD $1.152726
≥200 USD $0.446386
≥500 USD $0.430631
≥1000 USD $0.422754
Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Dimensions
Height Seated (Max) 3.556mm
Length 17.9mm
Width 7.6mm
Thickness 2.67mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 28
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Pin Count 28
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Memory Size 32kB
Number of Ports 1
Nominal Supply Current 85mA
Memory Type RAM, SDR, SRAM - Asynchronous
Max Supply Current 85mA
Access Time 15 ns
Organization 32KX8
Output Characteristics 3-STATE
Address Bus Width 15b
Density 256 kb
Standby Current-Max 0.002A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 8b
Standby Voltage-Min 3V
Alternative Model
No data
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