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2N5109
Central SemiconductorRoHS
/
Package TO-39
Category Transistors - Bipolar (BJT) - RF / Transistors - Bipolar (BJT) - RF
Description
TO-39 Through Hole Single 3 RF Transistor 400mA 1W 11dB 1.2GHz
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Inventory: 1567
Minimum: 1
Total Price: USD $10.82
Unit Price: USD $10.81943
≥1 USD $10.81943
≥10 USD $10.20701
≥100 USD $9.62925
≥500 USD $9.0842
≥1000 USD $8.57
≥3000 USD $8.08491
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Package / Case TO-39
Technical
Published 2011
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Power Dissipation-Max 1W
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 1.2 GHz
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 400mA
Collector Emitter Breakdown Voltage 20V
Gain 11 dB
Transition Frequency 1200MHz
Collector Emitter Saturation Voltage 500mV
Power - Output 1W
Frequency - Transition 1.2GHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 3V
hFE Min 70
Continuous Collector Current 400mA
Highest Frequency Band VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max 3.5pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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