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71V416S15YG8
Integrated Device Technology (IDT)RoHS
/
Package /
Category Memory / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 170mA
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Inventory: 7798
Minimum: 1
Total Price: USD $65.89
Unit Price: USD $65.88725
≥1 USD $65.88725
≥10 USD $54.06165
≥100 USD $52.37255
≥500 USD $50.6825
≥1000 USD $48.9934
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Number of Pins 44
Technical
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 44
Terminal Finish MATTE TIN
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Pin Count 44
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Memory Size 512kB
Number of Ports 1
Nominal Supply Current 170mA
Memory Type RAM, SDR, SRAM - Asynchronous
Max Supply Current 170mA
Access Time 15 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 4 Mb
Standby Current-Max 0.02A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 16b
Standby Voltage-Min 3V
Dimensions
Length 28.6mm
Width 10.2mm
Thickness 2.9mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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